Ying Wang Hongmei Wang Yunqi Liu* Chong-an Di Yanming Sun Weiping Wu Gui Yu Deqing Zhang* and Daoben Zhu*

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FETs characteristics with a mobility up to 0.1 cm² V^-1 s^-1 and an on/off ratio of nearly 5 丩 10⁴. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade^-1).

Chemical structure of 1-imino nitroxide pyrene (inset) and the thermal behavior of 1/冊 for 1-imino nitroxide pyrene

Schematic diagram of a field-effect transistor.

 FET characteristics of an OFET with vacuum-deposited 1-imino nitroxide pyrene on SiO₂/Si substrate: (a) output characteristic of OFET device and (b) transfer characteristic of OFET device.