Ying Wang Hongmei Wang Yunqi Liu* Chong-an Di Yanming Sun Weiping Wu Gui Yu Deqing Zhang* and Daoben Zhu*
Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FETs characteristics with a mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 丩 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).
Chemical structure of 1-imino nitroxide pyrene (inset) and the thermal behavior of 1/冊 for 1-imino nitroxide pyrene
Schematic diagram of a field-effect transistor.
FET characteristics of an OFET with vacuum-deposited 1-imino nitroxide pyrene on SiO2/Si substrate: (a) output characteristic of OFET device and (b) transfer characteristic of OFET device.
Key Laboratory of Organic Solids Center for Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100080 China
E-mail: liuyq@mail.iccas.ac.cn , |
