n-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube----Institute of Chemistry the Chinese Academy of Sciences

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n-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube

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Kai Xiao, Yunqi Liu,* Ping’an Hu, Gui Yu, Yanming Sun, and Daoben Zhu*

We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube (Fig. 1). Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.

J. Am. Chem. Soc. (2005, Vol. 127, No. 17, p.6335-6346)

Figure 1. Schematic diagram of a field-effect transistor made of an individual N-doped multiwalled carbon nanotube (left) and a scanning electron microscope image of the nanotube contacted between two electrodes (right).


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