By Chong-an Di, Dacheng Wei, Gui Yu,* Yunqi Liu,* Yunlong Guo, and Daoben Zhu

E-mail: yugui@mail.iccas.ac.cn; liuyq@mail.iccas.ac.cn

A facile patterning and preparing approach of graphene electrodes is described. The interdigital graphene electrodes were grown on the patterning Cu or Ag surface. The graphene electrodes show an outstanding interface contact with the organic semiconductor. The bottom contact organic field-effect transistors (OFETs) with the graphene source/drain electrodes exhibited excellent field-effect properties with a field-effect mobility of 0.53 cm²·V^–1·s^–1 and an on/off current ration of 10⁸. The mobility value is one of the best results for the OFETs with the bottom contact configuration and narrow channel length. Our results provide an effective way towards high-performance low-cost OFETs.

Advanced Materials, 2008, 20(17), 3289–3293